GaN thin films were prepared on Si ( 111 ) substrates by electrophoretic deposition ( EPD ) technique.采用 电泳沉积 法在Si ( 111 ) 衬底上制备出了GaN薄膜.This is the GaN LED chip and Yttrium Aluminum Garnet ( YAG ) package together cause....
GaN thin films were prepared on Si ( 111 ) substrates by electrophoretic deposition ( EPD ) technique.采用 电泳沉积 法在Si ( 111 ) 衬底上制备出了GaN薄膜.This is the GaN LED chip and Yttrium Aluminum Garnet ( YAG ) package together cause....